Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

ABSTRACT

Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.

TECHNICAL FIELD

This disclosure generally relates to semiconductor fabricationtechniques and, in particular, magnetic random access memory devices,and methods for fabricating magnetic random access memory devices.

BACKGROUND

Spin-transfer torque magnetic random-access memory (STT-MRAM) is a typeof solid state, non-volatile memory that uses tunnelingmagnetoresistance (TMR) to store information. An MRAM device comprisesan electrically connected array of magnetoresistive memory elements,referred to as magnetic tunnel junctions (MTJs). As is known in the art,a basic structure of a magnetic tunnel junction includes two thinferromagnetic layers separated by a thin insulating layer through whichelectrons can tunnel. The spin-transfer torque (STT) phenomenon isrealized in an MTJ structure, wherein one ferromagnetic layer (referredto as “magnetic free layer”) has a non-fixed magnetization, and theother ferromagnetic layer (referred to as a “magnetic pinned layer”, or“reference layer”) has a “fixed” magnetization.

An MTJ stores information by switching the magnetization state of themagnetic free layer. When the magnetization direction of the magneticfree layer is parallel to the magnetization direction of the referencelayer, the MTJ is in a “low resistance” state. Conversely, when themagnetization direction of the free layer is antiparallel to themagnetization direction of the reference layer, the MTJ is in a “highresistance” state. The TMR of an MTJ determines the difference inresistance between the high and low resistance states. In general, theTMR of an MTJ is defined as (R_(AP)−R_(P))/R_(P) where R_(P) and R_(AP)are the resistance of the MTJ for parallel and anti-parallel alignmentof the ferromagnetic layers, respectively. A relatively high differencebetween the high and low resistance states facilitates read operationsin the MRAM. The difference in resistance of these two states of the MTJis used to indicate a logical ‘1’ or ‘0’, thereby storing a bit ofinformation. The tunneling current is typically higher when the magneticmoments of the two ferromagnetic layers are parallel and lower when themagnetic moments of the two ferromagnetic layers are anti-parallel.

When fabricating MRAM devices, the MTJ structures are typicallyencapsulated in a layer of insulating/dielectric material, andconductive contacts are formed in the encapsulating layer ofinsulating/dielectric material to make electrical connections to andbetween the MTJ structures in an MRAM array. Conventional processes andmaterials that are used for encapsulating the MTJ structures andpatterning the encapsulating material to form contact openings to theMTJ structures, can cause a signification degradation in the electricaland/or magnetic performance of the MTJ structures.

SUMMARY

Embodiments of the invention generally include methods and devices forfabricating magnetic components (such as MRAM devices) having MTJstructures encapsulated in organic photopatternable dielectric material.For example, in one embodiment of the invention, a method includesforming a MTJ (magnetic tunnel junction) structure on a semiconductorsubstrate, encapsulating the MTJ structure in a layer of organicphotopatternable dielectric material, patterning the layer of organicphotopatternable dielectric material to form a contact opening in thelayer of organic photopatternable dielectric material to the MTJstructure, and filling the contact opening with metallic material.

Another embodiment includes a semiconductor device. The semiconductordevice includes a MTJ (magnetic tunnel junction) structure formed on asemiconductor substrate. The MTJ structure is encapsulated in a layer oforganic photopatternable dielectric material. A contact opening isformed in the layer of organic photopatternable dielectric material tothe MTJ structure, wherein the contact opening is filled with metallicmaterial. In one embodiment, the MTJ structure is formed as part of aBEOL (back end of line) structure on the semiconductor substrate, andwherein the layer of organic photopatternable dielectric material is anILD (inter-level dielectric) layer of the BEOL structure. In oneembodiment, the organic photopatternable dielectric material comprises apolymer material such as a photopatternable polyimide or an epoxy, forexample.

Other embodiments will be described in the following detaileddescription of embodiments, which is to be read in conjunction with theaccompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is cross-sectional schematic view of a semiconductor device at anintermediate stage of fabrication in which an MTJ structure is formed ona substrate, according to an embodiment of the invention.

FIG. 2 is cross-sectional schematic view of the semiconductor device ofFIG. 1 after depositing a layer of organic photopatternable dielectricmaterial to encapsulate the MTJ structure, according to an embodiment ofthe invention.

FIG. 3 is cross-sectional schematic view of the semiconductor device ofFIG. 1 after depositing a layer of organic photopatternable dielectricmaterial to encapsulate the MTJ structure, according to anotherembodiment of the invention.

FIG. 4 is a cross-sectional schematic view of the semiconductor deviceof FIG. 2 after patterning the layer of organic photopatternabledielectric material to form a contact opening to the MTJ structure,according to an embodiment of the invention.

FIG. 5 is a cross-sectional schematic view of the semiconductorstructure of FIG. 4 after forming a conformal liner over the surface ofthe semiconductor structure, according to an embodiment of theinvention.

FIG. 6 is a cross-sectional schematic view of the semiconductor deviceof FIG. 5 after depositing a layer of metallic material to fill thecontact opening, according to an embodiment of the invention.

FIG. 7 is a cross-sectional schematic view of the semiconductorstructure of FIG. 6 after planarizing the surface of the semiconductorstructure down to the layer of organic photopatternable dielectricmaterial, according to an embodiment of the invention.

DETAILED DESCRIPTION OF EMBODIMENTS

Embodiments of the invention will now be discussed in further detailwith regard to methods and devices for fabricating magnetic devices(e.g., MRAM devices) having MTJ structures encapsulated in organicphotopatternable dielectric material. As explained in further detailbelow, methods according to embodiments of the invention are provided toencapsulate MTJ structures in a layer of organic photopatternabledielectric material that is directly patterned to form contact openingsto the MTJ structures, which are filled with metallic material to formcontacts to the MTJ structures. The exemplary methods discussed hereinin accordance with embodiments of the invention provide significantadvantages in terms of enhanced performance, higher yield, and reducedfabrication process complexity for the fabrication of magneticcomponents (e.g., MRAM devices) which comprise MTJ structures, ascompared to conventional techniques.

It is to be understood that the various layers, structures, and regionsshown in the accompanying drawings are schematic illustrations that arenot drawn to scale. In addition, for ease of explanation, one or morelayers, structures, and regions of a type commonly used to formsemiconductor devices or structures may not be explicitly shown in agiven drawing. This does not imply that any layers, structures, andregions not explicitly shown are omitted from the actual semiconductorstructures.

Furthermore, it is to be understood that the embodiments discussedherein are not limited to the particular materials, features, andprocessing steps shown and described herein. In particular, with respectto semiconductor processing steps, it is to be emphasized that thedescriptions provided herein are not intended to encompass all of theprocessing steps that may be required to form a functional semiconductorintegrated circuit device. Rather, certain processing steps that arecommonly used in forming semiconductor devices, such as, for example,wet cleaning and annealing steps, are purposefully not described hereinfor economy of description.

Moreover, the same or similar reference numbers are used throughout thedrawings to denote the same or similar features, elements, orstructures, and thus, a detailed explanation of the same or similarfeatures, elements, or structures will not be repeated for each of thedrawings. It is to be understood that the terms “about” or“substantially” as used herein with regard to thicknesses, widths,percentages, ranges, etc., are meant to denote being close orapproximate to, but not exactly. For example, the term “about” or“substantially” as used herein implies that a small margin of error ispresent, such as 1% or less than the stated amount.

Methods for fabricating semiconductor devices (e.g., MRAM devices)comprising MTJ structures will now be discussed in further detail withinitial reference to FIG. 1, which shows a cross-sectional schematicview of a semiconductor device at an intermediate stage of fabricationin which a MTJ structure is formed on a substrate, according to anembodiment of the invention. In particular, FIG. 1 shows a semiconductorsubstrate 100, an FEOL (front-end-of-line) structure 110, an insulatinglayer 120, a first (lower) electrode 130, a magnetic tunnel junction(MTJ) 140 and a second (upper) electrode 150. In the example embodimentof FIG. 1, the MTJ 140 comprises a magnetic pinned layer 142 (orreference layer), a barrier tunneling layer 144, and a magnetic freelayer 146 disposed between the first and second electrodes 130 and 150.The various components 130, 140 and 150 form an MTJ structure.

In one embodiment, the substrate 100 comprises a bulk semiconductorsubstrate formed of, e.g., silicon, or other types of semiconductorsubstrate materials that are commonly used in bulk semiconductorfabrication processes such as germanium, silicon-germanium alloy,silicon carbide, silicon-germanium carbide alloy, or compoundsemiconductor materials (e.g. III-V and II-VI). Non-limiting examples ofcompound semiconductor materials include gallium arsenide, indiumarsenide, and indium phosphide. The thickness of the base substrate 100will vary depending on the application. In another embodiment, thesubstrate 100 comprises a SOI (silicon on insulator) substrate, whichcomprises an insulating layer (e.g., oxide layer) disposed between abase semiconductor substrate (e.g., silicon substrate) and an activesemiconductor layer (e.g., active silicon layer) in which active circuitcomponents (e.g., field effect transistors) are formed.

The FEOL structure 110 comprises various semiconductor devices andcomponents that are formed in or on the active surface of thesemiconductor substrate 100 to provide integrated circuitry for a targetapplication. For example, the FEOL structure 110 comprises FET devices(such as FinFET devices, planar MOSFET device, etc.), bipolartransistors, diodes, capacitors, inductors, resistors, isolationdevices, etc., which are formed in or on the active surface of thesemiconductor substrate 100. A BEOL (back-end-of-line) structure isformed on the FEOL structure 110 to connect the various components ofthe FEOL structure 100. The various components 120, 130, 140 and 150shown in FIG. 1 are part of the BEOL structure. As is known in the art,a BEOL structure comprises multiple levels of vertical and horizontalwiring embedded in layers of dielectric material, wherein conductivevias provide vertical wiring between layers, and interconnects providehorizontal wiring in a given layer. A BEOL fabrication process involvessuccessive depositing and patterning of multiple layers of dielectricand metallic material to form a network of electrical connections amongthe FEOL devices and to provide I/O connections to external components.

In the example embodiment of FIG. 1, the insulating layer 120 comprisesone or more insulating layers that are formed as part of the initialBEOL processing, including a PMD (pre-metal dielectric) layer, and oneor more inter-level dielectric (ILD) layers. The PMD and ILD layers ofthe insulating layer 120 may be formed of any suitable material such as,e.g., silicon oxide, silicon nitride, hydrogenated silicon carbon oxide,silicon based low-k dielectrics, porous dielectrics, or organicdielectrics including porous organic dielectrics. In addition, the PMDand ILD layers of the insulating layer 120 may be formed using knowndeposition techniques, such as, for example, ALD, CVD, PECVD, spin ondeposition, or PVD, followed by a standard planarization process (e.g.,CMP) to planarize the upper surface of the semiconductor structurebetween deposition of different layers. The horizontal and verticalmetal wiring of the BEOL structure in FIG. 1 is formed by patterning thedielectric layer by known lithography, reactive ion etching, cleaning,metal deposition and planarization processes. The main wiring metal isusually copper or copper alloys. This process of forming metal wiringwithin a dielectric insulator is repeated to form multiple layers of aBEOL structure.

In the example embodiment of FIG. 1, the PMD layer is formed directly onactive devices of the FEOL structure 110, and a plurality of conductivevia contacts (no specifically shown) would be formed through the PMDlayer in contact with terminals (e.g., source/drain regions) of theactive circuitry of the FEOL structure 110. A first ILD layer of theinsulating layer 120 is formed over the PMD layer and patterned to forma plurality of trenches/vias which are filled with metallic material toform a first metallization (M1) pattern. This process is repeated foradditional ILD and metallization levels of the BEOL structure. In theembodiment of FIG. 1, the first electrode 130 can be considered part ofa metallization layer of the BEOL structure. The first electrode 130provides a contact and pedestal on which to build the MTJ 140. The firstelectrode 130 can be formed of any suitable conductive material(s) suchas tantalum, tantalum nitride, ruthenium, titanium, etc., using knowndeposition techniques.

The MTJ 140 and second electrode 150 are formed at some level in theBEOL structure by sequentially depositing layers of materials formingthe respective components 142, 144, 146, and 150, followed by patterningthe deposited layers to form the second electrode 150 and the MTJ 140shown in FIG. 1. For example, the magnetic pinned layer 142 may beformed by depositing a layer of magnetic material which includes cobalt(Co) or iron (Fe), boron (B), or any combination thereof. In particular,the magnetic pinned layer 142 can be formed of CoFeB or CoFe. The tunnelbarrier layer 144 is formed of a non-magnetic, insulating material suchas magnesium oxide (MgO), aluminum oxide (AlO), or titanium oxide (TiO)or any other suitable materials. The free magnetic layer 146 can beformed of a magnetic material such as iron (Fe) or a magnetic materialincluding at least one of cobalt (Co) or iron (Fe) or nickel (Ni), orany combination thereof. The second electrode 150 can be formed of anysuitable conductive material(s) such as tantalum, tantalum nitride,ruthenium, titanium, etc.

The stack structure shown in FIG. 1 is formed by patterning theconductive material layer (e.g., TaN) to form the second electrode 150,which serves as a hard mask to etch the layers of materials forming theMTJ 140. The conductive material layer (forming the second electrode150) can be etched selective to the underlying magnetic material using areactive ion etch (RIE) process such as a halogen-based chemical etchprocess (e.g., including chlorine-containing gas and/orfluorine-containing gas chemistry). The hard mask (e.g., secondelectrode 150) is then used as an etch mask to etch the underlyingmagnetic and tunnel barrier layers, wherein the pattern of the hard maskis transferred to the underling magnetic free layer 146, the tunnelbarrier layer 144, and the pinned (reference) layer 142 using a standardMRAM stack etch process (e.g., an RIE or an ion beam etch (IBE)process).

It is to be understood that the MTJ 140 shown in FIG. 1 is merely oneembodiment of a MTJ structure which can implemented to provide a singlemagnetic tunnel junction stack framework. The term “MTJ structure” asused herein is meant to broadly refer to any stack structure whichincludes, at the very least, an MTJ which comprises two magnetic layers(e.g., ferromagnetic and/or ferrimagnetic layers) and an insulatinglayer deposited between the two magnetic layers through which electronscan tunnel. In the example embodiment of FIG. 1, the MTJ structurecomprises the MTJ 140 and electrodes 130 and 150. The MTJ 140 in FIG. 1may include other magnetic, conductive and/or insulting layers,depending on the given application. For example, additional stackedlayers may include two or more magnetic layers and two or more tunnelbarrier layers, and other layers that are commonly implemented toconstruct other types of magnetic tunnel junction structures, e.g.,double magnetic tunnel junction structures. The thickness of theconstituent layers of the MTJ 140 and materials used to form the MTJ 140will vary depending on the application.

Moreover, while FIG. 1 shows only one MTJ structure (130/140/150) forease of illustration, the semiconductor device is actually formed withan array of similar MTJ structures in the BEOL, to provide an MRAMarray, for example. The control circuitry to control the MRAM array isformed as part of the active circuitry of the FEOL 110, with lowerlevels of metallization of the BEOL structure providing electricalconnections between the active circuitry and the first (lower)electrodes 130 of the MTJ structures.

A next step in the fabrication process comprises encapsulating the MTJstructure (130/140/150) in a layer of organic photopatternabledielectric material. For example, FIG. 2 is cross-sectional schematicview of the semiconductor device of FIG. 1 after depositing a layer oforganic photopatternable dielectric material 160 to encapsulate the MTJstructure (130/140/150), according to an embodiment of the invention. Inone embodiment of the invention, the organic photopatternable dielectriclayer 160 is formed of any insulating/dielectric material that can bedirectly exposed and developed (via photolithography techniques) andwhich is suitable to serve as an ILD layer in the BEOL structure of thesemiconductor device (e.g., have relatively low dielectric constant,impervious to water, maintain structural integrity during subsequentBEOL and packaging processes, etc.).

For example, in one embodiment, the organic photopatternable dielectriclayer 160 comprises a spin-on organic photopatternable dielectricmaterial, which is self-planarizing. The use of a spin-on dielectricmaterial allows the organic photopatternable dielectric layer 160 to bedeposited with a planarized surface, as shown in FIG. 2, without theneed for a subsequent planarizing process (e.g., CMP (chemicalmechanical polishing)). In one embodiment of the invention, the organicphotopatternable dielectric layer 160 is formed of spin-on polymermaterial, such as a photopatternable polyimide, a photopatternableepoxy, etc. The thickness of the organic photopatternable dielectricmaterial is substantially greater than that of the MTJ (130/140/150).

In another embodiment of the invention, the organic photopatternabledielectric layer 160 can be formed by depositing an organicphotopatternable dielectric material using a technique that results in anon-planarized surface, but wherein a planarizing process (e.g., CMP)can be subsequently performed to planarize the organic photopatternabledielectric layer 160. For example, FIG. 3 is cross-sectional schematicview of the semiconductor device of FIG. 1 after depositing an organicphotopatternable dielectric layer 160′ to encapsulate the MTJ structure(130/140/150), according to another embodiment of the invention, whereinthe organic photopatternable dielectric layer 160′ is not selfplanarizing. As shown in FIG. 3, while deposition of the organicphotopatternable dielectric layer 160′ results in a non-planar surface,the organic photopatternable dielectric layer 160′ can be planarizedusing CMP to form the structure shown in FIG. 2. In one embodiment ofthe invention, the organic photopatternable dielectric layer 160′ ofFIG. 3 can be formed by depositing an organic photopatternabledielectric material (e.g., polymer material) using a low temperature CVDprocess (e.g., about 400 degrees Celsius and below).

A next step in the fabrication process comprises patterning of theorganic photopatternable dielectric layer 160 to form openings (e.g.,trenches) down to the second (upper) electrodes of the MTJ structures.Any suitable patterning techniques can be used to form the desiredopenings shown in FIG. 4. These patterning techniques include theoptical lithography patterning, e-beam lithography patterning, imprintlithography patterning, hot embossing patterning and the like. Thesedirect patterning techniques eliminate or minimize the need for reactiveion etching step required the prior art practice where a photoresist(and an antireflective coating) is required to form the desired patternsand then followed by a reactive ion etching process. For example, FIG. 4is a cross-sectional schematic view of the semiconductor device of FIG.2 after patterning the organic photopatternable dielectric layer 160 toform a contact opening 162 to the second electrode 150 of the MTJstructure, according to an embodiment of the invention. The contactopening 162 is formed by photolithographically patterning the organicphotopatternable dielectric layer 160. For example, the organicphotopatternable dielectric layer 160 is exposed using a suitableexposure mask, developed (rinsed) to form the opening 162, and thenannealed at a suitable temperature of about 400 degrees Celsius or less.

After patterning the organic photopatternable dielectric layer 160, thecontact openings formed in the organic photopatternable dielectric layer160 are filled with metallic material to form BEOL interconnects (orhorizontal wiring) to connect the MTJ structures to form the MRAM array.For example, FIGS. 5, 6, and 7 schematically illustrates a process flowto form metallic interconnects in the BEOL structure. In one embodiment,the metallic interconnects are formed using a standard copper damasceneprocess.

In particular, FIG. 5 is a cross-sectional schematic view of thesemiconductor structure of FIG. 4 after forming a conformal liner 170over the surface of the semiconductor structure, according to anembodiment of the invention. In one embodiment, the conformal liner 170comprises a plurality of conformal layers including, for example, aconformal diffusion barrier layer, and a copper seed layer. Theconformal diffusion barrier layer is formed to conformally cover thesurface of the organic photopatternable insulating layer 160 and thesidewall and bottom surfaces of the contact opening 162. The conformaldiffusion barrier layer can be a thin layer of Ta or TaN material whichis deposited using known methods. The conformal seed layer is formedover the conformal diffusion barrier layer using known techniques toprovide a seed/adhesion layer (e.g., copper seed layer) for a subsequentmetal deposition process.

FIG. 6 is a cross-sectional schematic view of the semiconductor deviceof FIG. 5 after depositing a layer of metallic material 180 over thesurface of the organic photopatternable dielectric layer 160 to fill thecontact opening 162 with metallic material, according to an embodimentof the invention. In one embodiment of the invention, the metallicmaterial 180 comprises copper which is deposited on the copper seedlayer using a standard electroplating process. After forming the layerof metallic material 180, a planarization process is performed to removethe excess metallic material from the surface of the patterned organicphotopatternable dielectric layer 160.

FIG. 7 is a cross-sectional schematic view of the semiconductorstructure of FIG. 6 after planarizing the surface of the semiconductorstructure down to the organic photopatternable dielectric layer 160,according to an embodiment of the invention. In one embodiment of theinvention, the planarization process is performed using CMP process witha chemical slurry having a composition that is configured to etchablyremove both the metallic material 180 and the liner 170 highly selective(e.g., about 10:1 or greater) to the organic photopatternable dielectriclayer 160. As shown in FIG. 7, following the CMP process, a portion 172of the liner 170 and a portion 182 of the layer of metallic material 180which remains in the contact opening 162 forms an electricalinterconnect in the organic photopatternable dielectric layer 160.

It is to be understood that the width and height of the electricalinterconnects will vary depending on, e.g., the design spacing rule ofthe given technology node utilized, the density of the MRAM devices, andother factors, which are known to those of ordinary skill in the art.Following the formation of the MRAM interconnects, any standard sequenceof processing steps can be implemented to complete the fabrication ofthe BEOL structure to connect the active devices of the FEOL layer 110and the MRAM devices in the BEOL structure, as well as form otherelements of the target integrated circuit to be fabricated, the detailsof which are not needed to understand embodiments as discussed herein.

It is to be appreciated that the use of an organic photopatternabledielectric material to encapsulate an array of MTJ structures in a BEOLstructure according to embodiments of the invention as described withreference to FIGS. 2, 3 and 4, for example, provides significantadvantages and benefits over conventional schemes. For example, in aconventional process, the MTJ structure shown in FIG. 1 would beencapsulated in an ILD layer formed with SiN or SiOx, wherein the SiN orSiOx ILD material is patterned to form the openings to the MRAM devices.The conventional processes that are used to deposit the SiN or SiOx ILDmaterial and pattern the SiN or SiOx ILD material to form metalliccontacts are known to degrade the electrical/magnetic performance of theMTJ structures, and introduce depth variability of the trench openings,which further affects the MTJ properties.

More specifically, in a conventional process, the ILD layer would beformed of SiN using a CVD process in which the deposition temperatures,and curing temperatures for the SiN film are relatively high (e.g.,greater than 400 degrees C.). Such high temperatures can damage the MTJstructures, resulting in degradation of the magnetic properties, as wellas the electronic properties, of the MTJ structures. Moreover, theconventional process is more complex in that it requires a thermalanneal or UV cure of the ILD layer, followed by the deposition of (i) anadhesion layer, (ii) an ARC (anti-reflection coating) layer, and (iii) aphotoresist layer, to form an etch mask that is used to etch openings inthe ILD layer. With this process, the photoresist layer is patternedusing standard methods, followed by a first etch process (e.g., RIE) toetch the exposed portion of the ARC layer, and then followed by a secondetch process (e.g., RIE) to etch trenches in the ILD layer using thephotoresist mask.

With this conventional process, the trenches that are etched are widerin profile than the width of the upper electrodes of the MTJ structures,which results in the etching of the ILD material adjacent to thesidewalls of the upper electrodes of the MTJ structures. This etchprocess introduces variability in the depth of the etched trenches,which results in more or less metallic material encapsulating the sidesof the upper electrodes for different MTJ structures. This variabilityin trench depth, and consequently, the variability in the size of theelectrical interconnects that contact the upper electrodes of the MTJstructures, results in variability in the characteristics of the MTJstructures across the MRAM array.

In contrast to conventional methods as discussed above, the use oforganic photopatternable dielectric material to encapsulate the MTJstructures of MRAM devices provides significant advantages in terms ofenhanced performance, higher yield, and reduced fabrication processcomplexity. Indeed, as compared to the conventional process (describedabove) which utilizes a conventional CVD dielectric film, embodiments ofthe invention as discussed above (e.g., FIGS. 2, 3 and 4) utilizes anorganic photopatternable dielectric material (e.g., polymer) as ILDmaterial to encapsulate the MTJ structures. Since the organicphotopatternable dielectric material is deposited, exposed and cured atlower temperatures (as compared to conventional CVD process) the MTJstructures are subjected to minimal damage from thermal processing, andthus, performance degradation is minimized or eliminated. Furthermore,since the trenches are formed by directly photolithographicallypatterning the organic photopatternable dielectric material in one step,trench variability is minimized or otherwise eliminated, resulting inthe fabrication of uniform contacts to the MTJ structures, which furtherimproves both the performance and the yield of MRAM memories.

It is to be understood that the methods discussed herein can beincorporated in various semiconductor process flows to fabricate MRAMdevices or other devices which comprise MTJ structures formed in a BEOLstructure, in conjunction with integrated circuits having analog anddigital circuitry or mixed-signal circuitry. In particular, integratedcircuit dies can be fabricated with various devices such as FinFETdevices, bipolar transistors, metal-oxide-semiconductor transistors,diodes, capacitors, inductors, etc. An integrated circuit can beemployed in applications, hardware, and/or electronic systems. Suitablehardware and systems for implementing the invention may include, but arenot limited to, personal computers, communication networks, electroniccommerce systems, portable communications devices (e.g., cell phones),solid-state media storage devices, functional circuitry, etc. Systemsand hardware incorporating such integrated circuits are considered partof the embodiments described herein. Given the teachings of theinvention provided herein, one of ordinary skill in the art will be ableto contemplate other implementations and applications of the techniquesdescribed herein according to embodiments of the invention.

Although exemplary embodiments have been described herein with referenceto the accompanying figures, it is to be understood that the inventionis not limited to those precise embodiments, and that various otherchanges and modifications may be made therein by one skilled in the artwithout departing from the scope of the appended claims.

We claim:
 1. A semiconductor device, comprising: an MTJ (magnetic tunneljunction) structure formed on a semiconductor substrate; a layer oforganic photopatternable dielectric material encapsulating the MTJstructure; and a metallic contact formed in the layer of organicphotopatternable dielectric material in contact with the MTJ structure;wherein the MTJ structure comprises an electrode that is encapsulated inthe layer of organic photopatternable dielectric material and in contactwith the metallic contact.
 2. The semiconductor device of claim 1,wherein the MTJ structure is formed as part of a BEOL (back end of line)structure on the semiconductor substrate, and wherein the layer oforganic photopattemable dielectric material comprises an ILD(inter-level dielectric) layer of the BEOL structure.
 3. Thesemiconductor device of claim 1, wherein the organic photopatternabledielectric material comprises a polymer material.
 4. The semiconductordevice of claim 3, wherein the polymer material comprises a polyimide.5. The semiconductor device of claim 3, wherein the polymer materialcomprises an epoxy.
 6. The semiconductor device of claim 1, wherein theorganic photopatternable dielectric material comprises a self-planarizedlayer of organic photopatternable dielectric material.
 7. Thesemiconductor device of claim 1, wherein the electrode is formed of ametallic material comprising at least one of tantalum, ruthenium, andtitanium.
 8. The semiconductor device of claim 1, wherein the MTJstructure comprises a first magnetic layer, a tunnel barrier layer, anda second magnetic layer.
 9. The semiconductor device of claim 8, whereinthe first magnetic layer comprises a magnetic pinned layer, wherein thesecond magnetic layer comprises a free magnetic layer, and wherein thetunnel barrier layer is disposed between the magnetic pinned layer andthe magnetic free layer.
 10. The semiconductor device of claim 1,wherein the MTJ structure comprises a MRAM (magnetic random accessmemory) element.
 11. A semiconductor device, comprising: a MRAM(magnetic random access memory) array formed on a semiconductorsubstrate, wherein the MRAM array comprises an array of MTJ (magnetictunnel junction) structures formed on the semiconductor substrate; alayer of organic photopatternable dielectric material encapsulating thearray of MTJ structures; and a plurality of metallic contacts formed inthe layer of organic photopatternable dielectric, wherein each metalliccontact is in contact with a corresponding one of the MTJ structures;wherein each MTJ structure comprises an electrode that is encapsulatedin the layer of organic photopatternable dielectric material and incontact with one of the metallic contacts.
 12. The semiconductor deviceof claim 11, wherein the MTJ structures are formed as part of a BEOL(back end of line) structure on the semiconductor substrate, and whereinthe layer of organic photopatternable dielectric material comprises anILD (inter-level dielectric) layer of the BEOL structure.
 13. Thesemiconductor device of claim 11, wherein the organic photopatternabledielectric material comprises a polymer material.
 14. The semiconductordevice of claim 13, wherein the polymer material comprises a polyimide.15. The semiconductor device of claim 13, wherein the polymer materialcomprises an epoxy.
 16. The semiconductor device of claim 11, whereinthe organic photopattemable dielectric material comprises aself-planarized layer of organic photopattemable dielectric material.17. The semiconductor device of claim 11, wherein each MTJ structurecomprises a first magnetic layer, a tunnel barrier layer, and a secondmagnetic layer.
 18. The semiconductor device of claim 17, wherein thefirst magnetic layer comprises a magnetic pinned layer, wherein thesecond magnetic layer comprises a free magnetic layer, and wherein thetunnel barrier layer is disposed between the magnetic pinned layer andthe magnetic free layer.
 19. The semiconductor device of claim 11,wherein each electrode is formed of a metallic material comprising atleast one of tantalum, ruthenium, and titanium.
 20. A semiconductordevice, comprising: an MTJ (magnetic tunnel junction) structure formedon a semiconductor substrate; a layer of organic photopatternabledielectric material encapsulating the MTJ structure, wherein the organicphotopatternable dielectric material comprises a self-planarized layerof organic photopatternable dielectric material; and a metallic contactformed in the layer of organic photopatternable dielectric material incontact with the MTJ structure; wherein the organic photopatternabledielectric material comprises a self-planarized layer of organicphotopatternable dielectric material.